THEORETICAL INVESTIGATION OF ELECTRONIC PROPERTIES OF HIGHLY CHARGED FULLERENES. SYSTEMS OF DISCRETE SHORT-LIVED VOLUME-LOCALIZED LEVELS (PREPRINT IBRAE 2018-08)

Preprint IBRAE-2018-08 

Arutyunyan R.V. 

We study the electronic properties of charged fullerenes and onion-like structures in the framework of a simple physical model and show the existence of a system of discrete short-lifetime quantum levels for electrons in the model well potential. In the case of positively charged fullerenes, we find that the energy of the volumelocalized levels ranges from 1 eV to 100 eV. Electrons captured by these discrete levels localized in the volume generate a specific nano-atom wherein electrons or μ-mesons are localized inside a charged hollow sphere of fullerene playing the role of a nucleus in an atom. In case of negatively charged single-layered or onion-like structure fullerenes, Coulomb field creates a spherical potential well for positively charged particles (protons, nuclei of deuterium, tritium). In such a case, a system of discrete levels for positively charged particles is created wherein protons act as electrons and negatively charged sphere of fullerene plays the role of a nucleus. 

Bibliographical reference

R.V. Arutyunyan. Theoretical investigation of electronic properties of highly charged fullerenes. Systems of discrete short-lived volume-localized levels / Preprint IBRAE 2018-08. — Moscow, 2018 — 12 p. — Bibliogr. 44 items. 

© Nuclear Safety Institute, 2018